SiC

  1. Single well or double well: First-principles study of 8H and 3C inclusions in the 4H SiC polytype, Mao-Sheng Miao and Walter R. L. Lambrecht, Phys. Rev. B 85, 205318 (2012) – Published 29 May 2012
  2. Electronic structure and magnetic properties of transition-metal-doped 3C and 4H silicon carbide, M. S. Miao and Walter R. L. Lambrecht, Phys. Rev. B 74, 235218 (2006) – Published 28 December 2006
  3. Electronic driving force for stacking fault expansion in 4H‐SiC, Walter R. L. Lambrecht and M. S. Miao, Phys. Rev. B 73, 155312 (2006) – Published 13 April 2006
  4. Electronic structure of thin heterocrystalline superlattices in SiC and AlN, M. S. Miao and Walter R. L. Lambrecht, Phys. Rev. B 68, 155320 (2003) – Published 21 October 2003
  5. Unified path for high-pressure transitions of SiC polytypes to the rocksalt structure, M. S. Miao and Walter R. L. Lambrecht,Phys. Rev. B 68, 092103 (2003) – Published 9 September 2003
  6. Pressure dependence of sound velocities in 3C−SiC and their relation to the high-pressure phase transition,Margarita Prikhodko, M. S. Miao, and Walter R. L. Lambrecht, Phys. Rev. B 66, 125201 (2002) – Published 3 September 2002
  7. Changes of the geometry and band structure of SiC along the orthorhombic high-pressure transition path between the zinc-blende and rocksalt structures,M. S. Miao, Margarita Prikhodko, and Walter R. L. Lambrecht, Phys. Rev. B 66, 064107 (2002) – Published 15 August 2002
  8. Comment on “Orthorhombic Intermediate State in the Zinc Blende to Rocksalt Transformation Path of SiC at High Pressure”, M. S. Miao, Margarita Prikhodko, and Walter R. L. Lambrecht, Phys. Rev. Lett. 88, 189601 (2002) – Published 19 April 2002
  9. Optical-absorption bands in the 1–3 eV range in n-type SiC polytypes, Sukit Limpijumnong, Walter R. L. Lambrecht, Sergey N. Rashkeev, and Benjamin Segall, Phys. Rev. B 59, 12890 (1999) – Published 15 May 1999
  10. Total energy differences between SiC polytypes revisited,Sukit Limpijumnong and Walter R. L. Lambrecht, Phys. Rev. B 57, 12017 (1998) – Published 15 May 1998
  11. Second-harmonic generation in SiC polytypes,Sergey N. Rashkeev, Walter R. L. Lambrecht, and Benjamin Segall, Phys. Rev. B 57, 9705 (1998) – Published 15 April 1998
  12. Electronic structure, Schottky barrier, and optical spectra of the SiC/TiC {111} interface, Sergey N. Rashkeev, Walter R. L. Lambrecht, and Benjamin Segall,Phys. Rev. B 55, 16472 (1997) – Published 15 June 1997
  13. Band-structure analysis of the conduction-band mass anisotropy in 6H and 4H SiC, Walter R. L. Lambrecht and Benjamin Segall, Phys. Rev. B 52, R2249(R) (1995) – Published 15 July 1995
  14. Calculated and measured uv reflectivity of SiC polytypes, W. R. L. Lambrecht, B. Segall, M. Yoganathan, W. Suttrop, R. P. Devaty, W. J. Choyke, J. A. Edmond, J. A. Powell, and M. Alouani, Phys. Rev. B 50, 10722 (1994) – Published 15 October 1994
  15. Calculated elastic constants and deformation potentials of cubic SiC, W. R. L. Lambrecht, B. Segall, M. Methfessel, and M. van Schilfgaarde, Phys. Rev. B 44, 3685 (1991) – Published 15 August 1991
  16. Electronic-structure study of the (110) inversion domain boundary in SiC, Walter R. L. Lambrecht and Benjamin Segall,  Phys. Rev. B 41, 2948 (1990) – Published 15 February 1990

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