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Valence band effective-mass Hamiltonians for the group-III nitrides from quasiparticle self-consistent GW band structures,Atchara Punya and Walter R. L. Lambrecht, Phys. Rev. B 85, 195147 (2012) – Published 29 May 2012
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Computational study of phonon modes in short-period AlN/GaN superlattices, Tula R. Paudel and Walter R. L. Lambrecht, Phys. Rev. B 80, 104202 (2009) – Published 28 September 2009
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Electronic structure of thin heterocrystalline superlattices in SiC and AlN, M. S. Miao and Walter R. L. Lambrecht, Phys. Rev. B 68, 155320 (2003) – Published 21 October 2003
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Effective masses and valence-band splittings in GaN and AlN, Kwiseon Kim, Walter R. L. Lambrecht, Benjamin Segall, and Mark van Schilfgaarde, Phys. Rev. B 56, 7363 (1997) – Published 15 September 1997
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X-ray absorption, glancing-angle reflectivity, and theoretical study of the N K- and Ga M2,3-edge spectra in GaN, W. R. L. Lambrecht, S. N. Rashkeev, B. Segall, K. Lawniczak-Jablonska, T. Suski, E. M. Gullikson, J. H. Underwood, R. C. C. Perera, J. C. Rife, I. Grzegory, S. Porowski, and D. K. Wickenden, Phys. Rev. B 55, 2612 (1997) – Published 15 January 1997
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Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN, Kwiseon Kim, Walter R. L. Lambrecht, and Benjamin Segall, Phys. Rev. B 53, 16310 (1996) – Published 15 June 1996
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UV reflectivity of GaN: Theory and experiment, W. R. L. Lambrecht, B. Segall, J. Rife, W. R. Hunter, and D. K. Wickenden, Phys. Rev. B 51, 13516 (1995) – Published 15 May 1995
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X-ray photoelectron spectroscopy and theory of the valence band and semicore Ga 3d states in GaN, W. R. L. Lambrecht, B. Segall, S. Strite, G. Martin, A. Agarwal, H. Morkoç, and A. Rockett, Phys. Rev. B 50, 14155 (1994) – Published 15 November 1994
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Electronic structure of GaN with strain and phonon distortions, Kwiseon Kim, Walter R. L. Lambrecht, and Benjamin Segall, Phys. Rev. B 50, 1502 (1994) – Published 15 July 1994
- Lambrecht, Walter RL; Prikhodko, Margarita; Anisotropy of UV reflectivity in wurtzite crystals: a comparison between GaN and CdSe, Solid State Communications 121, 549-554 (2002).
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